收藏本站
NTMSD3P102R2
FETKY ?
P-Channel Enhancement-Mode
Power MOSFET and Schottky Diode
Dual SO-8 Package
Features
? High Efficiency Components in a Single SO-8 Package
? High Density Power MOSFET with Low R DS(on) ,
Schottky Diode with Low V F
? Independent Pin-Outs for MOSFET and Schottky Die
Allowing for Flexibility in Application Use
? Less Component Placement for Board Space Savings
? SO-8 Surface Mount Package,
Mounting Information for SO-8 Package Provided
? Pb-Free Packages are Available
Applications
? DC-DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery-Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
http://onsemi.com
MOSFET
-3.05 AMPERES
-20 VOLTS
0.085 W @ V GS = -10 V
SCHOTTKY DIODE
1.0 AMPERE
20 VOLTS
470 mV @ I F = 1.0 A
1 8
A C
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted).
A
2
7
C
Rating
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Symbol
V DSS
V GS
Value
-20
" 20
Unit
V
V
S
G
3
4
6
5
D
D
Thermal Resistance -
Junction-to-Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Thermal Resistance -
Junction-to-Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ T A = 25 ° C
Continuous Drain Current @ T A = 70 ° C
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
R q JA
P D
I D
I D
I DM
T J , T stg
171
0.73
-2.34
-1.87
-8.0
100
1.25
-3.05
-2.44
-12
62.5
2.0
-3.86
-3.10
-15
- 55 to
° C/W
W
A
A
A
° C/W
W
A
A
A
° C/W
W
A
A
A
° C
8
1
SO-8
CASE 751
STYLE 18
E3P1
xx
A
Y
WW
G
(TOP VIEW)
MARKING DIAGRAM &
PIN ASSIGNMENT
C C D D
8
E3P1xx
AYWW G
G
1
A A S G
= Device Code
= 02 or S
= Assembly Location
= Year
= Work Week
= Pb-Free Package
+150
(Note: Microdot may be in either location)
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C
(V DD = -20 Vdc, V GS = -4.5 Vdc,
Peak I L = -7.5 Apk, L = 5 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
T L
140
260
mJ
° C
ORDERING INFORMATION
Device Package Shipping ?
NTMSD3P102R2 SO-8 2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTMSD3P102R2G
NTMSD3P102R2SG
SO-8
(Pb-Free)
SO-8
2500/Tape & Reel
2500/Tape & Reel
1. Minimum FR-4 or G-10 PCB, Steady State.
2. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick
single-sided), Steady State.
3. Mounted onto a 2 ″ square FR-4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single
sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
1
Publication Order Number:
NTMSD3P102R2/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTMSD3P303R2G MOSFET P-CH 30V 2.34A 8-SOIC
NTMSD6N303R2G MOSFET N-CH 30V 6A 8-SOIC
NTNUS3171PZT5G MOSFET P-CH 20V 200MA SOT-1123
NTP125N02RG MOSFET N-CH 24V 15.9A TO220AB
NTP18N06G MOSFET N-CH 60V 15A TO220AB
NTP18N06LG MOSFET N-CH 60V 15A TO220AB
NTP2955 MOSFET P-CH 60V 2.4A TO220AB
NTP30N06LG MOSFET N-CH 60V 30A TO220AB
相关代理商/技术参数
NTMSD3P102R2SG 功能描述:MOSFET FETKY 20V .085R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD3P303 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTMSD3P303R2 功能描述:MOSFET -30V -3.05A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD3P303R2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY?
NTMSD3P303R2_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
NTMSD3P303R2G 功能描述:MOSFET -30V -3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD6N303 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices
NTMSD6N303R2 功能描述:MOSFET 30V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube